Low current wideband amplifier using 0.2 /spl mu/m gate MODFET fabricated by using phase-shift lithography

Author

Ishida, I. ; Miyatsuji, K. ; Tanaka, T. ; Takenaka, H. ; Furukawa, H. ; Nishitsuji, M. ; Tamura, A. ; Ueda, D.

Author_Institution

Electron. Res. Lab., Matsushita Electron. Corp., Osaka, Japan

fYear

1996

fDate

3-6 Nov. 1996

Firstpage

249

Lastpage

252

Abstract

We have developed wideband amplifier that can keep over 10 dB gain at the drain voltage/current of 2 V/10 mA in the frequency range from 100 MHz to 3 GHz. The fabricated IC achieved low noise figure and high IP3 (output) of 1.4 dB and 30 dBm at 800 MHz, respectively. The present IC employs 0.2 /spl mu/m gate delta-doped MODFET structure fabricated by using phase-shift lithography.

Keywords

HEMT integrated circuits; UHF amplifiers; UHF integrated circuits; electric distortion; integrated circuit noise; photolithography; wideband amplifiers; 0.2 micron; 1.4 dB; 10 mA; 100 MHz to 3 GHz; 2 V; UHF amplifiers; delta-doped MODFET structure; distortion characteristics; noise figure; phase-shift lithography; wideband amplifier IC; Broadband amplifiers; Capacitance; Capacitors; Fabrication; Gallium arsenide; HEMTs; MODFET circuits; Permittivity; Roentgenium; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1996. Technical Digest 1996., 18th Annual

Conference_Location

Orlando, FL, USA

ISSN

1064-7775

Print_ISBN

0-7803-3504-X

Type

conf

DOI

10.1109/GAAS.1996.567880

Filename

567880