DocumentCode
1907352
Title
A43 Ps Si Bipolar Technology
Author
Koo, Yong Seo ; Chai, Sang Hoon ; Nam, Kee Soo ; An, Chul
Author_Institution
Process Development Sec., Electronics and Telecommunications Research Institute, P.O. Box 8, Daedog Science Town, Daejeon, Korea
fYear
1991
fDate
16-19 Sept. 1991
Firstpage
521
Lastpage
524
Abstract
In this paper, a Self-Aligned device using Vertical Nitride (SAVEN) having 43 ps/gate is proposed. To obtain the faster switching speed SAVEN adapted several technologies, such as the reduction of extrinsic base width, trench isolation, and emitter polycidation process. The emitter area was designed with 1.0 × 4.0 um**2.
Keywords
Design engineering; Electrodes; Etching; Fabrication; Impurities; Isolation technology; Microelectronics; Oxidation; Parasitic capacitance; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1991. ESSDERC '91. 21st European
Conference_Location
Montreux, Switzerland
Print_ISBN
0444890661
Type
conf
Filename
5435280
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