Title :
A43 Ps Si Bipolar Technology
Author :
Koo, Yong Seo ; Chai, Sang Hoon ; Nam, Kee Soo ; An, Chul
Author_Institution :
Process Development Sec., Electronics and Telecommunications Research Institute, P.O. Box 8, Daedog Science Town, Daejeon, Korea
Abstract :
In this paper, a Self-Aligned device using Vertical Nitride (SAVEN) having 43 ps/gate is proposed. To obtain the faster switching speed SAVEN adapted several technologies, such as the reduction of extrinsic base width, trench isolation, and emitter polycidation process. The emitter area was designed with 1.0 × 4.0 um**2.
Keywords :
Design engineering; Electrodes; Etching; Fabrication; Impurities; Isolation technology; Microelectronics; Oxidation; Parasitic capacitance; Voltage;
Conference_Titel :
Solid State Device Research Conference, 1991. ESSDERC '91. 21st European
Conference_Location :
Montreux, Switzerland
