Title :
A review of recent progress in InP-based optoelectronic integrated circuit receiver front-ends
Author_Institution :
Hughes Electron. Res. Labs., Malibu, CA, USA
Abstract :
InP-based OEIC receivers look promising for high-speed (/spl ges/10 Gb/s) optical communications systems and for WDM networks because of the inherent advantages of integration, and the intrinsic speed of the devices available. This paper reviews recent developments.
Keywords :
III-V semiconductors; indium compounds; integrated optoelectronics; optical fibre communication; optical receivers; reviews; wavelength division multiplexing; III-V semiconductors; InP; OEIC receivers; WDM networks; device speed; optical communications systems; optical fibre communication; optoelectronic integrated circuit; receiver front-ends; Bandwidth; Bit error rate; High speed optical techniques; Optical devices; Optical fiber communication; Optical fiber devices; Optical receivers; Optical sensors; Optoelectronic devices; Wavelength division multiplexing;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1996. Technical Digest 1996., 18th Annual
Conference_Location :
Orlando, FL, USA
Print_ISBN :
0-7803-3504-X
DOI :
10.1109/GAAS.1996.567881
