InGaP/GaAs HBT-IC chipset for 10-Gb/s optical receiver

Author

Ihara, T. ; Oikawa, Y. ; Yamamoto, T. ; Tomofuji, H. ; Hamano, H. ; Ohnishik, H. ; Watanabe, Y.

Author_Institution

Fujitsu Labs. Ltd., Kawasaki, Japan

fYear

1996

fDate

3-6 Nov. 1996

Firstpage

262

Lastpage

265

Abstract

We have developed an IC chipset for 10 Gb/s optical transmission systems using high-speed and reliable InGaP/GaAs HBTs. The amplifiers showed over 10 GHz bandwidth and the decision circuit showed a very small decision ambiguity of 6 mV at 10 Gb/s. Using these ICs, we achieved an optical receiver sensitivity of -19.6 dBm, and -36.2 dBm (Pe=10/sup -12/) with an optical preamplifier, for an STM-64 signal. The deviation of receiver sensitivity was within 1 dB over a wide temperature range of 0 to 85/spl deg/C.

Keywords

III-V semiconductors; bipolar integrated circuits; decision circuits; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; integrated optoelectronics; optical fibre communication; optical receivers; preamplifiers; 0 to 85 degC; 10 Gbit/s; HBT-IC chipset; III-V semiconductors; InGaP-GaAs; STM-64 signal; decision ambiguity; decision circuit; optical preamplifier; optical receiver; optical transmission systems; receiver sensitivity; sensitivity deviation; Bandwidth; Gallium arsenide; High speed integrated circuits; High speed optical techniques; Optical amplifiers; Optical receivers; Optical sensors; Photonic integrated circuits; Preamplifiers; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1996. Technical Digest 1996., 18th Annual

Conference_Location

Orlando, FL, USA

ISSN

1064-7775

Print_ISBN

0-7803-3504-X

Type

conf

DOI

10.1109/GAAS.1996.567883

Filename

567883