DocumentCode :
1907418
Title :
Passivation effects on step AlCu/TiN line electromigration performance
Author :
Ferlazzo, L. ; Lormand, G. ; Reimbold, G.
Author_Institution :
D. LETI CENG 85X 38041 Grenoble Cedex France
fYear :
1991
fDate :
16-19 Sept. 1991
Firstpage :
487
Lastpage :
490
Abstract :
Electromigration performance of AlCu/TiN with topography lines has been investigated and the results show a dependence of their behaviour on overlayer. When cross section reduction alone nearly account for the lifetime decrease of uncoated samples relative to flat structureO, it is insufficient to account for coated samples one. The simulations that were performed indicate that thermal gradients along the line are not important. Different microstructural fluctuations for both cases may be considered as supported by grain size analysis.
Keywords :
Current density; Electromigration; Grain size; Microelectronics; Passivation; Surfaces; Testing; Thermal factors; Thermal resistance; Tin;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference, 1991. ESSDERC '91. 21st European
Conference_Location :
Montreux, Switzerland
Print_ISBN :
0444890661
Type :
conf
Filename :
5435283
Link To Document :
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