Integrated circuits for an experimental 10 Gb/s (SONET OC-192) self-healing ring

Author

Jayakumar, A. ; Banwell, T.C. ; Hacker, J.B. ; Kong, D.T.

Author_Institution

Bellcore, Morristown, NJ, USA

fYear

1996

fDate

3-6 Nov. 1996

Firstpage

270

Lastpage

273

Abstract

SONET OC-192 with a data transmission rate of 9.95328 Gb/s has emerged as the next generation high capacity optical carrier. This paper presents the first complete implementation of 10 Gb/s multiplexing, demultiplexing and SONET framing functions on a 3-chip chip-set. The chip-set consists of an 8:1 multiplexer with auto phase alignment, a 1:8 demultiplexer with SONET frame detection and a multi-purpose interface chip to simplify system integration-all designed to operate at 10 Gb/s for use in an experimental SOMET OC-192 self-healing ring test bed. These experimental research prototype devices are based on the AlGaAs/GaAs Hetero-junction Bipolar Transistor (HBT) technology (f/sub t/=60 GHz). High speed packaging and system integration issues are also addressed.

Keywords

SONET; bipolar digital integrated circuits; demultiplexing equipment; multiplexing; multiplexing equipment; optical communication equipment; 10 Gbit/s; AlGaAs-GaAs; AlGaAs/GaAs HBT technology; SONET OC-192; auto phase alignment; chip-set; demultiplexer; frame detection; high speed packaging; integrated circuit; interface chip; multiplexer; optical carrier; self-healing ring; system integration; Automatic testing; Data communication; Demultiplexing; Gallium arsenide; High speed optical techniques; Multiplexing; Phase detection; Prototypes; SONET; System testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1996. Technical Digest 1996., 18th Annual

Conference_Location

Orlando, FL, USA

ISSN

1064-7775

Print_ISBN

0-7803-3504-X

Type

conf

DOI

10.1109/GAAS.1996.567885

Filename

567885