Title :
Electrical characteristic fluctuation and suppression in emerging CMOS device and circuit
Author :
Cheng, Hui-Wen ; Han, Ming-Hung ; Li, Yiming ; Lee, Kuo-Fu ; Yiu, Chun-Yen ; Khaing, Thet-Thet
Author_Institution :
Dept. of Electr. Eng., Nat. Chiao-Tung Univ., Hsinchu, Taiwan
Abstract :
We study the characteristic variability in high-κ metal-gate CMOS device and circuit induced by various intrinsic fluctuation sources. Using an experimentally calibrated 3D device-and-circuit coupled simulation; we estimate the effect of metal-gate work-function fluctuation, oxide-thickness fluctuation, process-variation effect, and random-dopant fluctuation on device DC/AC characteristics. We then predict their impacts on transfer and dynamic properties of digital and analog circuits. Finally, variability suppression techniques are demonstrated from device engineering viewpoints.
Keywords :
CMOS integrated circuits; high-k dielectric thin films; analog circuits; calibrated 3D device-and-circuit coupled simulation; device DC-AC characteristics; digital circuits; electrical characteristic fluctuation; high-κ metal-gate CMOS device; intrinsic fluctuation sources; metal-gate work-function fluctuation effect estimation; oxide-thickness fluctuation; process-variation effect; random dopant fluctuation; variability suppression techniques; CMOS integrated circuits; Doping profiles; Fluctuations; Logic gates; MOS devices; Metals; Resource description framework;
Conference_Titel :
Silicon Nanoelectronics Workshop (SNW), 2010
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-7727-2
Electronic_ISBN :
978-1-4244-7726-5
DOI :
10.1109/SNW.2010.5562560
