Subthreshold charge leakage in nanoparticle embedded DGMOSFET memory devices an analytical study

In this work, we present an analytical model for studying the sub-threshold charge leakage in nanocrystal embedded gate dielectric DGMOSFET Non Volatile Memories. From a parabolic approximation based method, we evaluate the surface potential and the threshold voltage in such a device. Thereafter using the WKB approximation, the charge leakage from the nanocrystal layer to the Si substrate under sub-threshold condition by the direct tunneling (DT) mechanism was modeled. We also model the lateral diffusion suppression in such DGMOS NVMs, and the impact of the nanocrystal embedding density on lateral diffusion.