• DocumentCode
    1907548
  • Title

    Boron diffusion effects from p+ polysilicon gate in thin thermal oxide and plasma nitrided oxide

  • Author

    Piot, B. ; Barla, K. ; Garcin, B. ; Straboni, A.

  • Author_Institution
    France Telecom CNET/CNS, Chemin du Vieux-Chêne, BP98, F-38243 Meylan Cedex, France
  • fYear
    1991
  • fDate
    16-19 Sept. 1991
  • Firstpage
    475
  • Lastpage
    478
  • Abstract
    The effects of boron diffusion into thermal and plasma nitrided thin oxide are studied on p+ poly gate capacitors. For N2 anneal at 950°C longer than 30 mn, interface state generation, enhanced electron trapping rate and reduction in Qbd are found for the non-nitrided oxide. Light plasma nitridation suppresses these detrimental effects while preserving the integrity of the Si/SiO2 interface.
  • Keywords
    Annealing; Boron; CMOS technology; Channel bank filters; Degradation; Electron traps; Interface states; MOS capacitors; Plasma chemistry; Thermal engineering;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1991. ESSDERC '91. 21st European
  • Conference_Location
    Montreux, Switzerland
  • Print_ISBN
    0444890661
  • Type

    conf

  • Filename
    5435288
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1907548