Title :
Boron diffusion effects from p+ polysilicon gate in thin thermal oxide and plasma nitrided oxide
Author :
Piot, B. ; Barla, K. ; Garcin, B. ; Straboni, A.
Author_Institution :
France Telecom CNET/CNS, Chemin du Vieux-Chêne, BP98, F-38243 Meylan Cedex, France
Abstract :
The effects of boron diffusion into thermal and plasma nitrided thin oxide are studied on p+ poly gate capacitors. For N2 anneal at 950°C longer than 30 mn, interface state generation, enhanced electron trapping rate and reduction in Qbd are found for the non-nitrided oxide. Light plasma nitridation suppresses these detrimental effects while preserving the integrity of the Si/SiO2 interface.
Keywords :
Annealing; Boron; CMOS technology; Channel bank filters; Degradation; Electron traps; Interface states; MOS capacitors; Plasma chemistry; Thermal engineering;
Conference_Titel :
Solid State Device Research Conference, 1991. ESSDERC '91. 21st European
Conference_Location :
Montreux, Switzerland
