DocumentCode :
1907549
Title :
High frequency precision modelling of CMOS-based, -Rx, translinear CCCII+
Author :
Chansamrong, Ekkamol ; Chipipop, Boonruk ; Chaisricharoen, Roungsan ; Sirinaovakul, Booncharoen
Author_Institution :
Dept. of Comput. Eng., Univ. of Technol. Thonburi, Bangkok, Thailand
fYear :
2013
fDate :
4-6 Sept. 2013
Firstpage :
703
Lastpage :
708
Abstract :
The translinear CMOS-based plus-type second-generation current-controlled conveyor (CCCII+) with negative intrinsic resistance is importance for voltage-mode and current-mode building blocks for analog signal processing. The high frequency model of CMOS-Based, -Rx, translinear CCCII+ is used to approximate the behavior of its performance at high frequency. The behavior at high frequency is essential because simulation result will close to real behavior depends on the accuracy of the model is. Because all of parasitic capacitances and resistances are not considered precisely in the previous work, so in this paper, we propose the analyzing of CMOS-Based, -Rx, translinear CCCII+ to investigate high frequency model including parasitic element. We use the elaborate mathematical modelling to find the expected result that similar to the experimental result. HSPICE simulation program is used to verify the circuit based on the MOSIS IBM´s 90 nm RF CMOS BSIM4 level-54 process with ±1.2V supply voltages. MATLAB software is used to compute the complex symbolic equations.
Keywords :
CMOS integrated circuits; SPICE; current conveyors; mathematics computing; negative resistance; signal processing; HSPICE simulation program; MATLAB software; MOSIS IBM; RF CMOS BSIM4 level-54 process; Rx; analog signal processing; complex symbolic equations; current-mode building blocks; high frequency model; high frequency precision modelling; mathematical modelling; negative intrinsic resistance; parasitic capacitances; parasitic element; parasitic resistances; translinear CCCII; translinear CMOS-based plus-type second-generation current-controlled conveyor; voltage-mode building blocks; Cutoff frequency; Equivalent circuits; Mathematical model; Semiconductor device modeling; Transfer functions; Transistors; CCCII; CMOS; CMOS-based; High frequency modelling; negative intrinsic resistance; plus-type;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Communications and Information Technologies (ISCIT), 2013 13th International Symposium on
Conference_Location :
Surat Thani
Print_ISBN :
978-1-4673-5578-0
Type :
conf
DOI :
10.1109/ISCIT.2013.6645965
Filename :
6645965
Link To Document :
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