Title :
Improvement of junction characteristics of ultra shallow junction with boron-cluster implantation and Ni-silicide for nano-scale CMOS technology
Author :
Shin, Hong-Sik ; Oh, Se-Kyung ; Kang, Min-Ho ; Han, In-Shik ; Kwon, Hyuk-Min ; Park, Sang-Uk ; Park, Byung-Seok ; Bok, Jung-Deuk ; Lee, Ga-Won ; Lee, Hi-Deok
Author_Institution :
Dept. of Electron. Eng., Chungnam Nat. Univ., Daejeon, South Korea
Abstract :
In this paper, novel Ni silicide on boron cluster implanted source/drain junction is proposed and its thermal stability characteristics are analyzed in depth. The proposed Ni-silicide (Ni-Pd(5%)/TiN) is compared with pure Ni/TiN structure and the effect of boron cluster on the shallow junction of high performance MOSFETs is characterized.
Keywords :
CMOS integrated circuits; MOSFET; boron; ion implantation; nanoelectronics; nickel; semiconductor junctions; silicon compounds; thermal stability; B; MOSFET; Ni-SiO2; boron-cluster implantation; nanoscale CMOS technology; thermal stability characteristics; ultra shallow junction characteristics; Annealing; Boron; Junctions; Nickel; Silicides; Thermal stability; Tin;
Conference_Titel :
Silicon Nanoelectronics Workshop (SNW), 2010
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-7727-2
Electronic_ISBN :
978-1-4244-7726-5
DOI :
10.1109/SNW.2010.5562561
