• DocumentCode
    1907557
  • Title

    Improvement of junction characteristics of ultra shallow junction with boron-cluster implantation and Ni-silicide for nano-scale CMOS technology

  • Author

    Shin, Hong-Sik ; Oh, Se-Kyung ; Kang, Min-Ho ; Han, In-Shik ; Kwon, Hyuk-Min ; Park, Sang-Uk ; Park, Byung-Seok ; Bok, Jung-Deuk ; Lee, Ga-Won ; Lee, Hi-Deok

  • Author_Institution
    Dept. of Electron. Eng., Chungnam Nat. Univ., Daejeon, South Korea
  • fYear
    2010
  • fDate
    13-14 June 2010
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    In this paper, novel Ni silicide on boron cluster implanted source/drain junction is proposed and its thermal stability characteristics are analyzed in depth. The proposed Ni-silicide (Ni-Pd(5%)/TiN) is compared with pure Ni/TiN structure and the effect of boron cluster on the shallow junction of high performance MOSFETs is characterized.
  • Keywords
    CMOS integrated circuits; MOSFET; boron; ion implantation; nanoelectronics; nickel; semiconductor junctions; silicon compounds; thermal stability; B; MOSFET; Ni-SiO2; boron-cluster implantation; nanoscale CMOS technology; thermal stability characteristics; ultra shallow junction characteristics; Annealing; Boron; Junctions; Nickel; Silicides; Thermal stability; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Silicon Nanoelectronics Workshop (SNW), 2010
  • Conference_Location
    Honolulu, HI
  • Print_ISBN
    978-1-4244-7727-2
  • Electronic_ISBN
    978-1-4244-7726-5
  • Type

    conf

  • DOI
    10.1109/SNW.2010.5562561
  • Filename
    5562561
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1907557