Title :
Field emission characteristics of BN nanofilms grown on GaN substrates
Author :
Luo, H. ; Funakawa, S. ; Wenzhong Shen ; Sugino, T.
Author_Institution :
Dept. of Electr. Eng., Osaka Univ., Suita, Japan
Abstract :
We examine the field emission characteristics of BN nanofilms on both flat and roughened GaN surface with the field enchancement factor over 200.
Keywords :
III-V semiconductors; boron compounds; electron field emission; plasma CVD coatings; semiconductor thin films; surface roughness; wide band gap semiconductors; BN; BN nanofilms; GaN; field emission; field enchancement factor; roughened GaN surface; Boron; Electron emission; Gallium nitride; Iron; Physics; Plasma properties; Rough surfaces; Substrates; Surface roughness; Thick films;
Conference_Titel :
Vacuum Microelectronics Conference, 2003. Technical Digest of the 16th International
Conference_Location :
Osaka, Japan
Print_ISBN :
4-8181-9515-4
DOI :
10.1109/IVMC.2003.1222982
