DocumentCode
1907577
Title
High frequency precision modelling of CMOS-based, -Rx, translinear CCCII-
Author
Chipipop, Boonruk ; Chansamrong, Ekkamol ; Chaisricharoen, Roungsan ; Sirinaovakul, Booncharoen
Author_Institution
Dept. of Comput. Eng., Rangsit Univ., Pathumthani, Thailand
fYear
2013
fDate
4-6 Sept. 2013
Firstpage
709
Lastpage
714
Abstract
In this paper, the CMOS-based translinear minustype second-generation current-controlled conveyor (CCCII-) with negative intrinsic resistance structure is proposed by Fabre´s modelling and high frequency equivalent circuit modelling. We will analyze the characteristic of high frequency equivalent circuit model that similar to the Fabre´s model. The accurate simulation leads to the closed results of two models those consider parasitic elements i.e. capacitances and resistances. In addition, we use symbolic equation from current and voltage transfer functions to find simple network topologies consist of capacitance and inductance in the series and parallel network. HSPICE simulation program is used to verify the circuit based on the MOSIS IBM´s 90 nm RF CMOS BSIM4 level-54 process with ±1.2V supply voltages. MATLAB software is used to compute the complex symbolic equations.
Keywords
CMOS integrated circuits; SPICE; capacitance; current conveyors; electric current control; inductance; mathematics computing; negative resistance; network synthesis; -Rx; CMOS-based translinear minustype second-generation current-controlled conveyor; Fabre modelling; HSPICE simulation program; MATLAB software; MOSIS IBM 90 nm RF CMOS BSIM4 level-54 process; capacitance; complex symbolic equations; current transfer functions; high frequency equivalent circuit modelling; high frequency precision modelling; inductance; negative intrinsic resistance structure; size 90 nm; translinear CCCII-; voltage transfer functions; Computational modeling; Cutoff frequency; Equivalent circuits; Mathematical model; Semiconductor device modeling; Transfer functions; CCCII; CMOS; CMOS-based; High frequency modelling; minus-type; negative intrinsic resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Communications and Information Technologies (ISCIT), 2013 13th International Symposium on
Conference_Location
Surat Thani
Print_ISBN
978-1-4673-5578-0
Type
conf
DOI
10.1109/ISCIT.2013.6645966
Filename
6645966
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