Title :
Impact of surface orientation on Vth variability of FinFET
Author :
Wu, Yu-Sheng ; Fan, Ming-Long ; Su, Pin
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
In this work, we investigate the Vth variability of Si- and Ge-channel FinFET with various surface orientations using analytical solution of Schrδdinger equation. The theoretical model provides us a physical and efficient method to explore the impact of quantum-confinement effect. In addition, to validate the results predicted by the theoretical model, we also perform the 3-D atomistic simulation to assess the Vth dispersion due to fin line-edge-roughness (fin-LER) for FinFET with various surface orientations.
Keywords :
MOSFET; Schrodinger equation; quantum confined Stark effect; 3D atomistic simulation; Ge-channel FinFET; Schrodinger equation; Si-channel FinFET; Vth dispersion; Vth variability; fin line-edge-roughness; fin-LER; quantum-confinement effect; surface orientation; Approximation methods; Equations; FinFETs; Mathematical model; Potential well; Sensitivity; Solid modeling;
Conference_Titel :
Silicon Nanoelectronics Workshop (SNW), 2010
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-7727-2
Electronic_ISBN :
978-1-4244-7726-5
DOI :
10.1109/SNW.2010.5562562
