Title :
Competition of nitrogen doping and graphitization effect for field electron emission from nanocrystalline diamond films
Author :
Karabutov, A.V. ; Konov, V.I. ; Pereverzev, V.V. ; Vlasov, I.I. ; Zavedeev, E.V. ; Pimenov, S.M. ; Loubnin, E.N.
Author_Institution :
Eng. Phys. Inst., Moscow, Russia
Abstract :
Nitrogen incorporation is promising for field electron emission from diamond films due to formation of electrical conductivity channels inside the films and changing electron affinity on the film surface.
Keywords :
CVD coatings; crystal microstructure; diamond; doping profiles; electrical conductivity; electron field emission; graphitisation; nanostructured materials; nitrogen; thin films; C:N; electrical conductivity; electron affinity; field electron emission; film surface; graphitization; nanocrystalline diamond films; nitrogen doping; nitrogen incorporation; Conductive films; Doping; Electron emission; Microstructure; Nitrogen; Plasma chemistry; Plasma temperature; Raman scattering; Semiconductor films; Spectroscopy;
Conference_Titel :
Vacuum Microelectronics Conference, 2003. Technical Digest of the 16th International
Conference_Location :
Osaka, Japan
Print_ISBN :
4-8181-9515-4
DOI :
10.1109/IVMC.2003.1222983
