DocumentCode
1907598
Title
Competition of nitrogen doping and graphitization effect for field electron emission from nanocrystalline diamond films
Author
Karabutov, A.V. ; Konov, V.I. ; Pereverzev, V.V. ; Vlasov, I.I. ; Zavedeev, E.V. ; Pimenov, S.M. ; Loubnin, E.N.
Author_Institution
Eng. Phys. Inst., Moscow, Russia
fYear
2003
fDate
7-11 July 2003
Firstpage
61
Lastpage
62
Abstract
Nitrogen incorporation is promising for field electron emission from diamond films due to formation of electrical conductivity channels inside the films and changing electron affinity on the film surface.
Keywords
CVD coatings; crystal microstructure; diamond; doping profiles; electrical conductivity; electron field emission; graphitisation; nanostructured materials; nitrogen; thin films; C:N; electrical conductivity; electron affinity; field electron emission; film surface; graphitization; nanocrystalline diamond films; nitrogen doping; nitrogen incorporation; Conductive films; Doping; Electron emission; Microstructure; Nitrogen; Plasma chemistry; Plasma temperature; Raman scattering; Semiconductor films; Spectroscopy;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Microelectronics Conference, 2003. Technical Digest of the 16th International
Conference_Location
Osaka, Japan
Print_ISBN
4-8181-9515-4
Type
conf
DOI
10.1109/IVMC.2003.1222983
Filename
1222983
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