Title :
Transconductance degradation and its correlation to the second substrate current hump of submicron NMOS LDD transistors
Author :
Gutierrez D., Edmundo A. ; Deferm, Ludo ; Declerck, Gilbert
Author_Institution :
IMEC, Kapeldreef 75, B-3001, Leuven, Belgium; National Institute of Astrophysics, Optics and Electronics (INAOE)-Puebla, México.
Abstract :
An extra degradation of the transconductance is observed in NMOS LDD devices which show the second substrate current hump [1]. In this paper the second substrate current hump is analysed and it is shown that the transconductance degradation is directly related to the lateral electric field at the source side.
Keywords :
Degradation; Doping; Electric resistance; Equations; MOS devices; Optical scattering; Surface resistance; Thermal resistance; Transconductance; Voltage;
Conference_Titel :
Solid State Device Research Conference, 1991. ESSDERC '91. 21st European
Conference_Location :
Montreux, Switzerland
