DocumentCode
1907625
Title
A 2-18 GHz non-blocking active 2*2 switch
Author
Schindler, M.J. ; Simon, K.M.
Author_Institution
Raytheon Co., Lexington, MA, USA
fYear
1989
fDate
22-25 Oct. 1989
Firstpage
181
Lastpage
183
Abstract
A novel, nonblocking active 2*2 switch composed of distributed-amplifier-based splitters and combiners has been developed. The distributed amplifier architecture yields a broadband, compact, nonblocking switch that has greater than 0 dB insertion gain from 2 to 18 GHz. The conventional approach to nonblocking switching requires considerably higher circuit complexity and size to achieve the same level of performance.<>
Keywords
III-V semiconductors; MMIC; field effect integrated circuits; gallium arsenide; microwave amplifiers; semiconductor switches; 2 to 18 GHz; GaAs; MMIC; active 2*2 switch; broadband; circuit complexity; combiners; distributed amplifier architecture; distributed-amplifier-based splitters; insertion gain; nonblocking switch; nonblocking switching; semiconductors; Capacitors; Coupling circuits; Distributed amplifiers; Frequency; Gallium arsenide; MMICs; Predictive models; Semiconductor device measurement; Switches; Switching circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1989. Technical Digest 1989., 11th Annual
Conference_Location
San Diego, CA, USA
Type
conf
DOI
10.1109/GAAS.1989.69321
Filename
69321
Link To Document