Title :
Electron emission from heavily nitrogen (N)-doped polycrystalline, homo, and heteroepitaxial CVD diamond
Author :
Mine, T. ; Yamaguchi, H. ; Yamada, T. ; Sawabe, A. ; Okano, K.
Author_Institution :
Dept. of Phys., Int. Christian Univ., Tokyo, Japan
Abstract :
Heteroepitaxial diamond is grown on a conducting substrate and its electron emission properties are investigated by comparing the electron emission properties of N-doped polycrystalline, homoepitaxial and heteroepitaxial diamond.
Keywords :
CVD coatings; diamond; electrical contacts; electron field emission; elemental semiconductors; nitrogen; semiconductor epitaxial layers; C:N; N-doped polycrystalline diamond; conducting substrate; electron emission properties; heteroepitaxial CVD diamond; homoepitaxial diamond; Anodes; Chemical vapor deposition; Contacts; Electron emission; Nitrogen; Optical films; Raman scattering; Spectroscopy; Substrates; Voltage;
Conference_Titel :
Vacuum Microelectronics Conference, 2003. Technical Digest of the 16th International
Conference_Location :
Osaka, Japan
Print_ISBN :
4-8181-9515-4
DOI :
10.1109/IVMC.2003.1222984
