Title :
Time Dependence of Hot-Carrier Degradation in LDD nMOSFETs
Author :
Wang, Q. ; Krautschneider, W.H. ; Brox, M. ; Weber, W.
Author_Institution :
Siemens AG, Corporate Research and Development, ZEE ME MS 34; Siemens Matushita Comp., Balanstr. 73, W-8000 Munich 80, F. R. Germany
Abstract :
This paper presents a new model for understanding the saturated time dependence of hot-carrier degradation in LDD nMOSFETs. The peak of the lateral field, and thus the zone of high injection current, moves into the LDD region where generated interface states are of almost no influence on the MOSFET I(V)-characteristics.
Keywords :
Degradation; Doping profiles; Hot carriers; Interface states; MOSFETs; Microelectronics; P-n junctions; Research and development; Semiconductor process modeling; Stress;
Conference_Titel :
Solid State Device Research Conference, 1991. ESSDERC '91. 21st European
Conference_Location :
Montreux, Switzerland
