DocumentCode
1907655
Title
Time Dependence of Hot-Carrier Degradation in LDD nMOSFETs
Author
Wang, Q. ; Krautschneider, W.H. ; Brox, M. ; Weber, W.
Author_Institution
Siemens AG, Corporate Research and Development, ZEE ME MS 34; Siemens Matushita Comp., Balanstr. 73, W-8000 Munich 80, F. R. Germany
fYear
1991
fDate
16-19 Sept. 1991
Firstpage
441
Lastpage
444
Abstract
This paper presents a new model for understanding the saturated time dependence of hot-carrier degradation in LDD nMOSFETs. The peak of the lateral field, and thus the zone of high injection current, moves into the LDD region where generated interface states are of almost no influence on the MOSFET I(V)-characteristics.
Keywords
Degradation; Doping profiles; Hot carriers; Interface states; MOSFETs; Microelectronics; P-n junctions; Research and development; Semiconductor process modeling; Stress;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1991. ESSDERC '91. 21st European
Conference_Location
Montreux, Switzerland
Print_ISBN
0444890661
Type
conf
Filename
5435293
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