80 GHz AlGaAs HBT oscillator

Author

Aoki, I. ; Tezuka, K. ; Matsuura, H. ; Kobayashi, S. ; Fujita, T. ; Miura, A.

Author_Institution

Teratec Corp., Tokyo, Japan

fYear

1996

fDate

3-6 Nov. 1996

Firstpage

281

Lastpage

284

Abstract

This paper describes an 80 GHz monolithic fundamental frequency oscillator using an AlGaAs heterojunction bipolar transistor technology. The transistor performs a unity current gain frequency f/sub T/=130 GHz and a maximum frequency of oscillation f/sub max/=180 GHz. The output signal level of the oscillator is -9 dBm, and the SSB phase noise is estimated as -80 dBc/Hz at 1 MHz offset frequency. A couple of coplanar waveguides are utilized for resonators.

Keywords

III-V semiconductors; MMIC oscillators; aluminium compounds; bipolar MMIC; gallium arsenide; heterojunction bipolar transistors; millimetre wave oscillators; 80 GHz; AlGaAs; AlGaAs HBT oscillator; SSB phase noise; coplanar waveguide; heterojunction bipolar transistor; maximum frequency of oscillation; monolithic fundamental frequency oscillator; output signal level; resonator; unity current gain frequency; Coplanar waveguides; Frequency estimation; Gallium arsenide; HEMTs; Heterojunction bipolar transistors; Indium phosphide; MMICs; Microwave oscillators; Phase noise; Resistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1996. Technical Digest 1996., 18th Annual

Conference_Location

Orlando, FL, USA

ISSN

1064-7775

Print_ISBN

0-7803-3504-X

Type

conf

DOI

10.1109/GAAS.1996.567887

Filename

567887