Title :
80 GHz AlGaAs HBT oscillator
Author :
Aoki, I. ; Tezuka, K. ; Matsuura, H. ; Kobayashi, S. ; Fujita, T. ; Miura, A.
Author_Institution :
Teratec Corp., Tokyo, Japan
Abstract :
This paper describes an 80 GHz monolithic fundamental frequency oscillator using an AlGaAs heterojunction bipolar transistor technology. The transistor performs a unity current gain frequency f/sub T/=130 GHz and a maximum frequency of oscillation f/sub max/=180 GHz. The output signal level of the oscillator is -9 dBm, and the SSB phase noise is estimated as -80 dBc/Hz at 1 MHz offset frequency. A couple of coplanar waveguides are utilized for resonators.
Keywords :
III-V semiconductors; MMIC oscillators; aluminium compounds; bipolar MMIC; gallium arsenide; heterojunction bipolar transistors; millimetre wave oscillators; 80 GHz; AlGaAs; AlGaAs HBT oscillator; SSB phase noise; coplanar waveguide; heterojunction bipolar transistor; maximum frequency of oscillation; monolithic fundamental frequency oscillator; output signal level; resonator; unity current gain frequency; Coplanar waveguides; Frequency estimation; Gallium arsenide; HEMTs; Heterojunction bipolar transistors; Indium phosphide; MMICs; Microwave oscillators; Phase noise; Resistors;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1996. Technical Digest 1996., 18th Annual
Conference_Location :
Orlando, FL, USA
Print_ISBN :
0-7803-3504-X
DOI :
10.1109/GAAS.1996.567887
