• DocumentCode
    1907746
  • Title

    Analysis of post-stress effects in passivated MOSFET´s after Hot-Carrier stress

  • Author

    de Schrijver, E. ; Heremans, P. ; Bellens, Rik ; Groeseneken, G. ; Maes, H.E.

  • Author_Institution
    IMEC vzw, Kapeldreef 75, 3001 Leuven, Belgium
  • fYear
    1991
  • fDate
    16-19 Sept. 1991
  • Firstpage
    437
  • Lastpage
    440
  • Abstract
    Passivated n-channel transistors of different technologies still show interface trap density increases after termination of hot-carrier stress. A systematic study of this effect and its dependence on various parameters was made, using the Charge-Pumping technique. A tentative model is presented, that explains the observed phenomena.
  • Keywords
    Charge pumps; Degradation; Electron traps; Hot carrier effects; Hot carriers; MOSFETs; Microelectronics; Stress; Transconductance; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1991. ESSDERC '91. 21st European
  • Conference_Location
    Montreux, Switzerland
  • Print_ISBN
    0444890661
  • Type

    conf

  • Filename
    5435296
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1907746