DocumentCode :
1907750
Title :
Design of a CMOS-compatible field-emission magnetic sensor with adjustable sensitivity
Author :
Garner, D.M. ; French, P.J. ; Hui, G. ; Fung, A.
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. Coll. London, UK
fYear :
2003
fDate :
7-11 July 2003
Firstpage :
71
Lastpage :
72
Abstract :
A magnetic sensor based upon the effect of the Lorentz force on vacuum electron motion has been presented. The device has its electrodes in the plane of the silicon substrate, allowing fields perpendicular to the substrate to be detected.
Keywords :
electron field emission; magnetic sensors; sensitivity; CMOS compatible field emission magnetic sensor; Lorentz force; Si; electrodes; sensitivity; silicon substrate; vacuum electron motion; Anodes; Cathodes; Electrodes; Electron beams; Etching; Magnetic field measurement; Magnetic sensors; Silicon; Voice mail; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Microelectronics Conference, 2003. Technical Digest of the 16th International
Conference_Location :
Osaka, Japan
Print_ISBN :
4-8181-9515-4
Type :
conf
DOI :
10.1109/IVMC.2003.1222988
Filename :
1222988
Link To Document :
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