Title :
Analysis of SCEs in nanoscale FinFET with high-k gate dielectric
Author :
Xie, Qian ; Xu, Jun
Author_Institution :
Tsinghua Nat. Lab. for Inf. Sci. & Technol., Tsinghua Univ., Beijing, China
Abstract :
We derive a three-dimensional (3-D) analytical model of scale length for nanoscale SOI tri-gate FET (SOI-FinFET) and discuss its significance. This work takes into account the difference in permittivity between the fin (channel) and the gate insulator, and thus permits this model accurate for the analysis of SCEs in nanoscale FinFET with high-k gate dielectric. Based on the theory, we analyze the effects of geometrical dimensions and materials on the SCEs in nanoscale FinFET.
Keywords :
MOSFET; silicon-on-insulator; gate insulator; high-k gate dielectric; nanoscale SOI trigate FET; short channel effect; Analytical models; FinFETs; Insulators; Logic gates; Materials; Nanoscale devices; Permittivity;
Conference_Titel :
Silicon Nanoelectronics Workshop (SNW), 2010
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-7727-2
Electronic_ISBN :
978-1-4244-7726-5
DOI :
10.1109/SNW.2010.5562569
