Title :
A novel nitrogen-doped SiOx resistive switching memory with low switching voltages
Author :
Gao, Dejin ; Zhang, Lijie ; Huang, Ru ; Wang, Runsheng ; Wu, Dongmei ; Kuang, Yongbian ; Tang, Yu ; Yu, Zhe ; Wang, Albert Z H ; Wang, Yangyuan
Author_Institution :
Key Lab. of Microelectron. Devices & Circuits, Peking Univ., Beijing, China
Abstract :
In summary, a novel RRAM with the structure of Cu/SixOyNz/W was first fabricated and its characteristics are thoroughly investigated. The new device exhibited low switching voltages and low reset currents, demonstrating its potential for low-power applications. Repeatable unipolar resistive switching characteristics in terms of high off/on resistance ratio and good retention capability were observed. The switching mechanism of the device was analyzed and can be explained by the formation and rupture of vacancy filaments.
Keywords :
CMOS digital integrated circuits; copper; low-power electronics; random-access storage; silicon compounds; switching circuits; tungsten; CMOS process technology; Cu-SiON-W; RRAM; low reset currents; low switching voltages; low-power electronics; nitrogen-doped SiOx resistive switching memory; off-on resistance ratio; repeatable unipolar resistive switching characteristics; Copper; Electrodes; Nitrogen; Resistance; Switches; Temperature; Voltage measurement;
Conference_Titel :
Silicon Nanoelectronics Workshop (SNW), 2010
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-7727-2
Electronic_ISBN :
978-1-4244-7726-5
DOI :
10.1109/SNW.2010.5562577
