A novel nitrogen-doped SiOx resistive switching memory with low switching voltages

Author

Gao, Dejin ; Zhang, Lijie ; Huang, Ru ; Wang, Runsheng ; Wu, Dongmei ; Kuang, Yongbian ; Tang, Yu ; Yu, Zhe ; Wang, Albert Z H ; Wang, Yangyuan

Author_Institution

Key Lab. of Microelectron. Devices & Circuits, Peking Univ., Beijing, China

fYear

2010

fDate

13-14 June 2010

Firstpage

1

Lastpage

2

Abstract

In summary, a novel RRAM with the structure of Cu/Si_xO_yN_z/W was first fabricated and its characteristics are thoroughly investigated. The new device exhibited low switching voltages and low reset currents, demonstrating its potential for low-power applications. Repeatable unipolar resistive switching characteristics in terms of high off/on resistance ratio and good retention capability were observed. The switching mechanism of the device was analyzed and can be explained by the formation and rupture of vacancy filaments.

Keywords

CMOS digital integrated circuits; copper; low-power electronics; random-access storage; silicon compounds; switching circuits; tungsten; CMOS process technology; Cu-SiON-W; RRAM; low reset currents; low switching voltages; low-power electronics; nitrogen-doped SiO_x resistive switching memory; off-on resistance ratio; repeatable unipolar resistive switching characteristics; Copper; Electrodes; Nitrogen; Resistance; Switches; Temperature; Voltage measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Nanoelectronics Workshop (SNW), 2010

Conference_Location

Honolulu, HI

Print_ISBN

978-1-4244-7727-2

Electronic_ISBN

978-1-4244-7726-5

Type

conf

DOI

10.1109/SNW.2010.5562577

Filename

5562577