Title :
Effects of high-temperature forming gas anneal on HfO/sub 2/ MOSFET performance
Author :
Onishi, K. ; Chang Seok Kang ; Rino Choi ; Hag-ju Cho ; Gopalan, S. ; Nieh, R. ; Krishnan, S. ; Lee, J.C.
Author_Institution :
Microelectron. Res. Center, Texas Univ., Austin, TX, USA
Abstract :
Effects of forming gas (FG) annealing on HfO/sub 2/ MOSFET performance have been studied. High-temperature (500-600/spl deg/C) FG annealing has been shown to significantly improve carrier mobility and subthreshold slopes for both N and PMOSFETs. The improvement has been correlated to the reduction in interfacial state density. The effectiveness of FG annealing has also been examined on samples that underwent surface preparations with NH/sub 3/ or NO annealing prior to HfO/sub 2/ deposition. It was found that FG annealing did not degrade PMOS negative bias temperature instability characteristics.
Keywords :
MOSFET; annealing; carrier mobility; dielectric thin films; electronic density of states; hafnium compounds; high-temperature techniques; interface states; semiconductor device measurement; surface treatment; 500 to 600 C; FG annealing; HfO/sub 2/ MOSFET performance; HfO/sub 2/ deposition; HfO/sub 2/-Si; NH/sub 3/; NH/sub 3/ annealing; NMOSFET; NO; NO annealing; PMOS negative bias temperature instability characteristics; PMOSFET; carrier mobility; high-temperature forming gas anneal effects; interfacial state density reduction; subthreshold slopes; surface preparations; Annealing; Capacitance-voltage characteristics; Degradation; Fabrication; Hafnium oxide; Hydrogen; MOSFET circuits; Rough surfaces; Surface roughness; Temperature;
Conference_Titel :
VLSI Technology, 2002. Digest of Technical Papers. 2002 Symposium on
Conference_Location :
Honolulu, HI, USA
Print_ISBN :
0-7803-7312-X
DOI :
10.1109/VLSIT.2002.1015372
