DocumentCode
1908098
Title
High Capacitance Isolated Surrounding Stacked Trench Cell For Advanced DRAMs
Author
Hofmann, F. ; Hänsch, W. ; Geib, H. ; Rösner, W. ; Takacs, D. ; Risch, L.
Author_Institution
Siemens AG, Corporate Research and Development, 8 Munich 83
fYear
1991
fDate
16-19 Sept. 1991
Firstpage
359
Lastpage
362
Abstract
High density trench type memory cells have been fabricated with silicon islands formed by a grid of trenches. The thin poly-silicon capacitor electrodes surround almost the total cell area and are isolated from the substrate. Due to the large capacitor area very high cell capacitances can be achieved which makes this cell concept shrinkable up to the 256M-DRAM generation.
Keywords
Capacitance; Capacitors; Dielectrics; Doping; Electrodes; Etching; Microelectronics; Oxidation; Random access memory; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1991. ESSDERC '91. 21st European
Conference_Location
Montreux, Switzerland
Print_ISBN
0444890661
Type
conf
Filename
5435309
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