Title :
Metal gate MOSFETs with HfO/sub 2/ gate dielectric
Author :
Samavedam, S.B. ; Tseng, H.H. ; Tobin, P.J. ; Mogab, J. ; Dakshina-Murthy, S. ; La, L.B. ; Smith, J. ; Schaeffer, J. ; Zavala, M. ; Martin, R. ; Nguyen, B.-Y. ; Hebert, L. ; Adetutu, O. ; Dhandapani, V. ; Luo, T.-Y. ; Garcia, R. ; Abramowitz, P. ; Moosa,
Author_Institution :
Digital DNA Labs., Texas Univ., Austin, TX, USA
Abstract :
We report for the first time electrical characterization of HfO/sub 2/ p- and n-MOSFETs with CVD TiN and PVD TaSiN gates respectively fabricated using conventional CMOS integration. Their performance is compared to PVD TiN-gated HfO/sub 2/ and SiO/sub 2/ n- and p-MOSFETs. To understand the issues with metal gates on high K gate dielectrics, PVD TiN MOSFETs were extensively characterized. At 10 nA//spl mu/m leakage, 0.345 mA//spl mu/m drive current was obtained from PVD TiN/HfO/sub 2/ p-MOSFETs. HfO/sub 2/ n-MOSFETs with metal gates show about 10/sup 4/ times reduction in gate leakage compared to poly/SiO/sub 2/ devices.
Keywords :
CMOS integrated circuits; CVD coatings; MOSFET; dielectric thin films; hafnium compounds; permittivity; semiconductor device measurement; semiconductor device metallisation; silicon compounds; sputtered coatings; tantalum compounds; titanium compounds; CMOS integration; CVD TiN gate; HfO/sub 2/ gate dielectric; HfO/sub 2/ n-MOSFET; HfO/sub 2/ p-MOSFET; PVD TaSiN gate; PVD TiN-gated HfO/sub 2/ n-MOSFET; PVD TiN-gated HfO/sub 2/ p-MOSFET; PVD TiN-gated SiO/sub 2/ n-MOSFET; PVD TiN-gated SiO/sub 2/ p-MOSFET; TaSiN-HfO/sub 2/-Si; TiN-HfO/sub 2/-Si; TiN-SiO/sub 2/-Si; drive current; electrical characterization; gate leakage; high K gate dielectrics; leakage current; metal gate MOSFET; poly/SiO/sub 2/ devices; Annealing; Atherosclerosis; CMOS technology; Capacitance; Dielectrics; Gate leakage; Hafnium oxide; MOS devices; MOSFET circuits; Tin;
Conference_Titel :
VLSI Technology, 2002. Digest of Technical Papers. 2002 Symposium on
Conference_Location :
Honolulu, HI, USA
Print_ISBN :
0-7803-7312-X
DOI :
10.1109/VLSIT.2002.1015373
