DocumentCode :
1908154
Title :
Specific structural factors influencing on reliability of CVD-HfO/sub 2/
Author :
Harada, Y. ; Niwa, M. ; Sungjoo Lee ; Dim-Lee Kwong
Author_Institution :
ULSI Process Technol. Dev. Center, Matsushita Electr. Ind. Co. Ltd., Kyoto, Japan
fYear :
2002
fDate :
11-13 June 2002
Firstpage :
26
Lastpage :
27
Abstract :
We report on two key issues for CVD-HfO/sub 2/ gate dielectric which influence their reliability. The first is extrinsic defects, i.e. two types of extrinsic defects which lead to large electrical leakage. The other issue is interfaces inside the film, i.e. stoichiometric interfaces due to Si out-diffusion from the substrate, and interfaces defined by dielectric constant transitions formed by a diffusion mechanism of Si into HfO/sub 2/. Lower Weibull slope /spl beta/ is mainly determined by the distance from the Si substrate to the k-transition interface. Although /spl beta/ becomes smaller due to the k-transition interface, it was clarified to be improved by a single layered silicate without k-transition interface.
Keywords :
CVD coatings; MIS structures; Weibull distribution; chemical interdiffusion; dielectric thin films; hafnium compounds; integrated circuit reliability; interface structure; leakage currents; permittivity; semiconductor-insulator boundaries; CVD-HfO/sub 2/ gate dielectric; HfO/sub 2/-Si; Si; Si out-diffusion; Si substrate/k-transition interface distance; Weibull slope; dielectric constant transition interface; electrical leakage; extrinsic defects; reliability; single layered silicate; stoichiometric interface; structural factors; Annealing; Cleaning; Dielectric constant; Dielectric substrates; Equations; Hafnium; Performance analysis; Quantum capacitance; Quantum mechanics; Semiconductor films;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, 2002. Digest of Technical Papers. 2002 Symposium on
Conference_Location :
Honolulu, HI, USA
Print_ISBN :
0-7803-7312-X
Type :
conf
DOI :
10.1109/VLSIT.2002.1015374
Filename :
1015374
Link To Document :
بازگشت