Shrink Potential, Stability and Yieldability of a Multilayer Vertical Stacked Capacitor for 64/256 MDRAM

Multilayered vertical stacked capacitors with 3 and 2 poly storage node lamellas with a thickness down to 35 nm, covered by an ONO dielectric film, tightly shape controlled by means of physical process features, show a remarkable high degree of process reproduceability and mechanical stability, together with a high electrical quality and yield. They are shown to fulfill 64 and 256 MDRAM storage capacitor requirements.