Hysteresis and critical phenomena in silicon on insulator MOSFET´s

An analytical model is proposed to account for the floating body effects in silicon on insulator MOSFET´s. It enables a quantitative description of the hysteresis effects in the static characteristics and explains the correlation between the conductance and transconductance. Experimental data illustrate the occurrence of the negative conductance/transconductance and suggest that a critical phenomenon comparable to a second order phase transition takes place.