Title :
Analysis and study of different parameters affecting the I–V characteristics of tunnel-FET transistor
Author :
Gupta, Partha Sarathi ; Rahaman, Hafizur ; Kanungo, Sayan ; Dasgupta, P.S.
Author_Institution :
Sch. of VLSI Technol., Bengal Eng. & Sci. Univ., Kolkata, India
Abstract :
This paper presents a thorough simulation study on the various drive current improvement schemes on Double Gated Tunneling Field Effect Transistor. It also presents a band-gap engineering technique in order to increase the on-state current of the device. Qualitative analysis has been provided explaining the effect of these techniques on the device characteristics.
Keywords :
driver circuits; field effect transistors; tunnel transistors; I-V characteristics; band-gap engineering technique; double gated tunneling field effect transistor; drive current improvement scheme; on-state current; qualitative analysis; tunnel-FET transistor; Aluminum; Capacitors; Cobalt; FETs; Logic gates; Permittivity; Band-to-Band Tunelling; TCAD; TFET;
Conference_Titel :
Devices, Circuits and Systems (ICDCS), 2012 International Conference on
Conference_Location :
Coimbatore
Print_ISBN :
978-1-4577-1545-7
DOI :
10.1109/ICDCSyst.2012.6188680
