A Lateral Bipolar Transistor Concept on SOI using a Self-Aligned Base Definition Technique

A lateral bipolar transistor technology for the fabrication of high performance lateral devices on SOI is presented. The presented technology makes use of selective etching procedures and time controlled wet etching to define the basewidth of the devices. 2-D process simulation results are presented together with 2-D device simulations showing the applicability of the proposed process.