Title :
Investigation of interconnect effects in a transimpedance amplifier
Author :
Shi, Xiaomeng ; Lu, Zhenghao ; Ma, Jianguo ; Li, Erping ; Yeo, Kiat Seng ; Do, Manh Anh
Author_Institution :
Nanyang Technol. Univ.
fDate :
Feb. 27 2006-March 3 2006
Abstract :
A novel interconnect model is used in the post layout simulation of a transimpedance amplifier working at 10 GB/s data rate. The unnegligible high frequency interconnect effects such as the inductive effect, skin effect, distributed effect, substrate losses, etc. have been considered in the model. Simulation result employing the proposed model is compared with that using conventional foundry provided RC interconnect model. Apparent discrepancy has been observed and the reason is analyzed
Keywords :
amplifiers; losses; skin effect; distributed effect; inductive effect; interconnect effects; skin effect; substrate losses; transimpedance amplifier; Circuit simulation; Electronic design automation and methodology; Equivalent circuits; Foundries; Frequency; Integrated circuit interconnections; Integrated circuit modeling; RLC circuits; Semiconductor device modeling; Skin effect;
Conference_Titel :
Electromagnetic Compatibility, 2006. EMC-Zurich 2006. 17th International Zurich Symposium on
Conference_Location :
Singapore
Print_ISBN :
3-9522990-3-0
DOI :
10.1109/EMCZUR.2006.215002
