Control of dopant-induced quantum dots by channel geometry

As device dimensions are continuously scaled down, the discreteness of dopant distribution has a significant effect on conventional device operation and controllability. This paper will show that the structure of dopant-induced quantum dot array can be controlled in nanoscale SOI-FETs containing a large number of dopants by the channel geometry. It is also shown that single electron transport through discrete dopants can be realized by controlling the channel geometry and utilizing the favorable effect of a statistical number of dopants. This may allow control for new applications such as dopant-based turnstiles.