Title :
Sensitivity of on-wafer interconnects to CMOS process parameters at radio frequency
Author :
Shi, Xiaomeng ; Ma, Jianguo ; Li, Erping ; Yeo, Kiat Seng ; Do, Manh Anh
Author_Institution :
Nanyang Technol. Univ.
fDate :
Feb. 27 2006-March 3 2006
Abstract :
This paper investigates the sensitivity of the on-wafer interconnects to the Si CMOS process parameters. Experiments are conducted to emulate state-of-the-art and future technologies. S-parameters of the interconnect have been examined. The influence of the process parameters on the transmission and reflection capacities of the on-wafer interconnects are discussed
Keywords :
CMOS integrated circuits; S-parameters; elemental semiconductors; radiofrequency integrated circuits; sensitivity analysis; silicon; S-parameters; Si; Si CMOS process parameters; on-wafer interconnects; radio frequency; reflection capacities; transmission capacities; CMOS process; CMOS technology; Conductivity; Dielectric substrates; Integrated circuit interconnections; Integrated circuit technology; Radio frequency; Radiofrequency integrated circuits; Testing; Wireless communication;
Conference_Titel :
Electromagnetic Compatibility, 2006. EMC-Zurich 2006. 17th International Zurich Symposium on
Conference_Location :
Singapore
Print_ISBN :
3-9522990-3-0
DOI :
10.1109/EMCZUR.2006.215003
