Sensitivity of on-wafer interconnects to CMOS process parameters at radio frequency

Author

Shi, Xiaomeng ; Ma, Jianguo ; Li, Erping ; Yeo, Kiat Seng ; Do, Manh Anh

Author_Institution

Nanyang Technol. Univ.

fYear

2006

fDate

Feb. 27 2006-March 3 2006

Firstpage

590

Lastpage

593

Abstract

This paper investigates the sensitivity of the on-wafer interconnects to the Si CMOS process parameters. Experiments are conducted to emulate state-of-the-art and future technologies. S-parameters of the interconnect have been examined. The influence of the process parameters on the transmission and reflection capacities of the on-wafer interconnects are discussed

Keywords

CMOS integrated circuits; S-parameters; elemental semiconductors; radiofrequency integrated circuits; sensitivity analysis; silicon; S-parameters; Si; Si CMOS process parameters; on-wafer interconnects; radio frequency; reflection capacities; transmission capacities; CMOS process; CMOS technology; Conductivity; Dielectric substrates; Integrated circuit interconnections; Integrated circuit technology; Radio frequency; Radiofrequency integrated circuits; Testing; Wireless communication;

fLanguage

English

Publisher

ieee

Conference_Titel

Electromagnetic Compatibility, 2006. EMC-Zurich 2006. 17th International Zurich Symposium on

Conference_Location

Singapore

Print_ISBN

3-9522990-3-0

Type

conf

DOI

10.1109/EMCZUR.2006.215003

Filename

1629693

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1908268