Title :
Quantum transport in ultra-scaled phosphorous-doped silicon nanowires
Author :
Ryu, Hoon ; Lee, S. ; Weber, B. ; Mahapatra, S. ; Simmons, M.Y. ; Hollenberg, L.C.L. ; Klimeck, G.
Author_Institution :
Network for Comput. Nanotechnol., Purdue Univ., West Lafayette, IN, USA
Abstract :
Highly phosphorous-doped nanowires in silicon (Si:P NW) represent the ultimate nanowire scaling limit of 1 atom thickness and a few atoms width. Experimental data are compared to an atomistic full-band model. Charge-potential self-consistency is computed by solving the exchange-correlation LDA corrected Schrödinger-Poisson equation. Transport through donor bands is observed in Si:P NW at low temperature. The semi-metallic conductance computed in the ballistic regime agrees well with the experiment. Sensitivity of the NW properties on doping constant and placement disorder on the channel is addressed. The modeling confirms that the nanowires are semi-metallic and transport can be gate modulated.
Keywords :
Poisson equation; Schrodinger equation; density functional theory; electrical conductivity; electronic structure; elemental semiconductors; exchange interactions (electron); heavily doped semiconductors; nanowires; phosphorus; semiconductor doping; semiconductor quantum wires; silicon; tight-binding calculations; Si:P; atomistic full-band model; ballistic regime; charge-potential self-consistency; donor bands; doping constant; exchange-correlation LDA corrected Schrodinger-Poisson equation; highly phosphorous-doped nanowires; nanowire properties; placement disorder; quantum transport; semimetallic conductance; ultimate nanowire scaling limit; ultrascaled phosphorous-doped silicon nanowires; DVD; Doping; Logic gates; Nanowires; Physics; Semiconductor process modeling; Silicon;
Conference_Titel :
Silicon Nanoelectronics Workshop (SNW), 2010
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-7727-2
Electronic_ISBN :
978-1-4244-7726-5
DOI :
10.1109/SNW.2010.5562585
