The effect of MESFET structures on frequency dispersion of drain conductance and its impact on mark density effect of high speed logic ICs

Author

Nakajima, S. ; Tsumura, E. ; Yanagisawa, M. ; Sakurada, T.

Author_Institution

Optoelectron. R&D Labs., Sumitomo Electr. Ind. Ltd., Yokohama, Japan

fYear

1998

fDate

1-4 Nov. 1998

Firstpage

107

Lastpage

111

Abstract

This paper describes the effect of MESFET structures on frequency dispersion of drain conductance (g/sub d/). The frequency dispersion of g/sub d/ is found to be affected by gate length, buried p-layer concentration, n/sup +/ sheet resistance, and active layer thickness. Finally, we show that the device with small frequency dispersion of g/sub d/ can suppress the mark density effect of logic ICs.

Keywords

III-V semiconductors; MESFET integrated circuits; Schottky gate field effect transistors; field effect logic circuits; gallium arsenide; high-speed integrated circuits; GaAs; LDD structure; MESFET structures; active layer thickness; buried p-layer concentration; drain conductance; frequency dispersion; gate length; high speed logic ICs; mark density effect; n/sup +/ sheet resistance; Dispersion; Electron emission; Frequency; Insulation; Laboratories; Logic devices; MESFETs; Research and development; Temperature dependence; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1998. Technical Digest 1998., 20th Annual

Conference_Location

Atlanta, GA, USA

ISSN

1064-7775

Print_ISBN

0-7803-5049-9

Type

conf

DOI

10.1109/GAAS.1998.722640

Filename

722640