Title :
Scattering in Si-nanowires — Where does it matter?
Author :
Klimeck, Gerhard ; Luiser, Mathieu
Author_Institution :
Network for Comput. Nanotechnol., Purdue Univ., West Lafayette, IN, USA
Abstract :
Electron transport is computed in 3nm Si nanowires subject to incoherent scattering from phonons. The electronic structure of the nanowire is represented in an atomistic sp3d5s* tight binding basis. Phonon modes are computed in an atomistic valence force field rather than a continuum deformation potential. Atomistic transport and incoherent scattering are coupled through the non-equilibrium Green function formalism (NEGF) in our new OMEN simulator. Energy loss due to phonon emission is shown to lead to a resistive potential drop in the emitter of the nanowire. Phonon absorption is shown to increase the current in a band-to-band-tunneling configuration.
Keywords :
Green´s function methods; elemental semiconductors; nanowires; phonons; semiconductor quantum wires; silicon; tight-binding calculations; tunnelling; Si; Si nanowires; atomistic tight binding basis; atomistic transport; atomistic valence force; band-to-band-tunneling configuration; electron transport; electronic structure; energy loss; nonequilibrium Green function formalism; phonon absorption; phonon emission; phonon incoherent scattering; phonon modes; resistive potential drop; size 3 nm; Computational modeling; Electric potential; Nanowires; Numerical models; Phonons; Scattering; Silicon;
Conference_Titel :
Silicon Nanoelectronics Workshop (SNW), 2010
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-7727-2
Electronic_ISBN :
978-1-4244-7726-5
DOI :
10.1109/SNW.2010.5562586
