Title :
Heterostructure Bipolar Transistors Based on InP and Application to Integrated Circuits for Lightwave Communication
Author :
Nottenburg, Richard N.
Author_Institution :
AT&T Bell Laboratories, Murray Hill, NJ 07974
Abstract :
This paper gives an overview of the properties of high speed Al0.48In0.52 As/In0.53 Ga0.47 As and InP/In0.53 Ga0.47 As heterostructure bipolar transistors (HBTs). Examples of the application of these transistors in integrated circuits relevant for lightwave communication systems are shown.
Keywords :
Application specific integrated circuits; Bipolar integrated circuits; Bipolar transistors; Circuit simulation; Circuit testing; Gallium arsenide; Indium phosphide; Multiplexing; Switches; Voltage;
Conference_Titel :
Solid State Device Research Conference, 1991. ESSDERC '91. 21st European
Conference_Location :
Montreux, Switzerland
