Title :
Novel fabrication technique of sub-10-nm-diameter Si nanowire FET using active oxidation
Author :
Morita, Yukinori ; Migita, Shinji ; Mizubayashi, Wataru ; Ota, Hiroyuki
Author_Institution :
Nanodevice Innovation Res. Center (NIRC), Nat. Inst. of Adv. Ind. Sci. & Technol. (AIST), Tsukuba, Japan
Abstract :
We propose a novel technique for top-down fabrication of Si nanowire (SiNW) field effect transistors (FETs) using active oxidation of the Si channel. The width and line edge roughness of the SiNW channel were simultaneously reduced by active oxidation to 2.8 nm and 1.97 nm (3-σ), respectively. Device performance of ultra-thin SiNW FETs with atomically controlled nanowire-size and nanowire-shape is demonstrated.
Keywords :
elemental semiconductors; field effect transistors; nanowires; silicon; Si; active oxidation; atomically controlled nanowire-size; field effect transistors; line edge roughness; nanowire-shape; size 1.97 nm; size 10 nm; size 2.8 nm; top-down fabrication technique; ultra-thin nanowire FET; Annealing; FETs; Fabrication; Logic gates; Oxidation; Silicon; Silicon on insulator technology;
Conference_Titel :
Silicon Nanoelectronics Workshop (SNW), 2010
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-7727-2
Electronic_ISBN :
978-1-4244-7726-5
DOI :
10.1109/SNW.2010.5562588
