Title :
Single-event effects in micromachined PMOSFETs
Author :
Osman, Ashraf A. ; Mojarradi, Mohammad ; Mayaram, Kartikeya
Author_Institution :
Sch. of Electr. Eng. & Comput. Sci., Washington State Univ., Pullman, WA, USA
fDate :
31 May-3 Jun 1998
Abstract :
Single-event effects in micromachined PMOSFETs in a 2 μm standard CMOS process are examined using device simulation. A comparison with the bulk and SOI PMOSFETs with comparable structures is also provided. The effects of N-well depth, angle of incidence, and N-well contact have been investigated in micromachined transistors. The substrate current and collected charge in micromachined PMOSFETs with thin N-wells are significantly lower compared to bulk PMOS devices
Keywords :
CMOS integrated circuits; MOSFET; micromachining; radiation effects; semiconductor device models; 2 micron; N-well contact; N-well depth; SEU effects; angle of incidence; collected charge; device simulation; micromachined PMOSFETs; micromachined transistors; single-event effects; standard CMOS process; substrate current; CMOS process; Circuits; Etching; Insulation; MOS devices; MOSFETs; Monitoring; Silicon on insulator technology; Single event upset; Testing;
Conference_Titel :
Circuits and Systems, 1998. ISCAS '98. Proceedings of the 1998 IEEE International Symposium on
Conference_Location :
Monterey, CA
Print_ISBN :
0-7803-4455-3
DOI :
10.1109/ISCAS.1998.705293
