DocumentCode

1908426

Title

Tunneling gate oxide MOSFET technology

Author

Momose, Husati Saski ; Nakamura, S.-i. ; Katsumata, Y. ; Iwai, Hiroshi

Author_Institution

Toshiba Corp., Japan

fYear

1997

fDate

22-24 September 1997

Firstpage

133

Lastpage

142

Keywords

Dielectric devices; Dielectric films; Gate leakage; Hot carriers; Insulation; Leakage current; Logic; MOSFET circuits; Roads; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference, 1997. Proceeding of the 27th European

Print_ISBN

2-86332-221-4

Type

conf

DOI

10.1109/ESSDERC.1997.194387

Filename

1503317