Title :
Tunneling gate oxide MOSFET technology
Author :
Momose, Husati Saski ; Nakamura, S.-i. ; Katsumata, Y. ; Iwai, Hiroshi
Author_Institution :
Toshiba Corp., Japan
fDate :
22-24 September 1997
Keywords :
Dielectric devices; Dielectric films; Gate leakage; Hot carriers; Insulation; Leakage current; Logic; MOSFET circuits; Roads; Tunneling;
Conference_Titel :
Solid-State Device Research Conference, 1997. Proceeding of the 27th European
Print_ISBN :
2-86332-221-4
DOI :
10.1109/ESSDERC.1997.194387
