Title :
Long range pinning interaction in ultra-thin insulator-inserted metal/germanium junctions
Author :
Nishimura, T. ; Kita, K. ; Nagashio, K. ; Toriumi, A.
Author_Institution :
Dept. of Mater. Eng., Univ. of Tokyo, Tokyo, Japan
Abstract :
In this paper, we discuss the Fermi Level Pinning (FLP) modulation at metal/germanium (Ge) interface by inserting ultra-thin insulator film. The FLP was alleviated gradually and continuously with increasing insulator (GeO2) thickness up to 2 nm. The results cannot be simply explained by the termination of dangling bonds or defects just at Ge interface. It is inferred that relatively long range (~ 2 nm) interaction between metal and Ge might be involved in the FLP and its alleviation.
Keywords :
Fermi level; MIS structures; Schottky barriers; aluminium; copper; current density; dangling bonds; elemental semiconductors; germanium; germanium compounds; gold; insulating thin films; interface states; semiconductor thin films; Al-GeO2-Ge; Au-GeO2-Ge; Cu-GeO2-Ge; Ge; Schottky barriers; charge neutrality; current density; dangling bonds; long range Fermi level pinning interaction; metal-germanium interface; ultrathin insulator film; Films; Gold; Insulators; Junctions; Schottky diodes; Silicon;
Conference_Titel :
Silicon Nanoelectronics Workshop (SNW), 2010
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-7727-2
Electronic_ISBN :
978-1-4244-7726-5
DOI :
10.1109/SNW.2010.5562590
