• DocumentCode
    1908504
  • Title

    10 Gbit/s Monolithic Integrated Optoelectronic Receiver using an MSM Photodiode and AlGaAs/GaAs HEMTs

  • Author

    Hurm, V. ; Rosenzweig, J. ; Ludwig, M. ; Axmann, A. ; Benz, W. ; Berroth, M. ; Osorio, R. ; Hülsmann, A. ; Kaufel, G. ; Köhler, K. ; Raynor, B. ; Schneider, Jo.

  • Author_Institution
    Fraunhofer-Institut f?r Angewandte Festk?rperphysik, Tullastr. 72, D-7800 Freiburg, Germany
  • fYear
    1991
  • fDate
    16-19 Sept. 1991
  • Firstpage
    275
  • Lastpage
    278
  • Abstract
    A 10 Gbit/s monolithic integrated optoelectronic receiver has been fabricated with a metal-semiconductor-metal (MSM) photodiode and enhancement/depletion 0.5 ¿m recessed-gate AlGaAs/GaAs HEMTs. A -3dB bandwidth of 11.3 GHz has been achieved.
  • Keywords
    Bandwidth; Circuits; Gallium arsenide; HEMTs; Integrated optoelectronics; MODFETs; Photodiodes; Resistors; Substrates; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1991. ESSDERC '91. 21st European
  • Conference_Location
    Montreux, Switzerland
  • Print_ISBN
    0444890661
  • Type

    conf

  • Filename
    5435325
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1908504