Title :
GaN based devices for electronic applications
Author :
Khan, M.A. ; Shur, M.S.
Author_Institution :
APA Optics, APA inc., USA
fDate :
22-24 September 1997
Keywords :
Aluminum gallium nitride; Electrons; Epitaxial growth; Gallium arsenide; Gallium nitride; HEMTs; MODFETs; Silicon; Substrates; Thermal conductivity;
Conference_Titel :
Solid-State Device Research Conference, 1997. Proceeding of the 27th European
Print_ISBN :
2-86332-221-4
DOI :
10.1109/ESSDERC.1997.194393
