Title :
48 GHz digital ICs using transferred-substrate HBTs
Author :
Rodwell, M. ; Lee, Q. ; Mensa, D. ; Pullela, R. ; Guthrie, J. ; Martin, S.C. ; Smith, R.P. ; Jaganathan, S. ; Mathew, T. ; Agarwal, B. ; Long, S.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Abstract :
Using substrate transfer processes, we have fabricated heterojunction bipolar transistors with submicron emitter-base and collector-base junctions, minimizing RC parasitics and increasing f/sub max/ to 500 GHz. The process also provides a microstrip wiring environment on a low-/spl epsiv//sub r/ dielectric substrate. First design iterations of ECL master-slave flip-flops exhibit 48 GHz maximum clock frequency when connected as static frequency dividers.
Keywords :
bipolar digital integrated circuits; emitter-coupled logic; flip-flops; frequency dividers; heterojunction bipolar transistors; high-speed integrated circuits; integrated circuit technology; 48 GHz; 500 GHz; ECL master-slave flip-flops; RC parasitics minimisation; digital ICs; heterojunction bipolar transistors; microstrip wiring environment; static frequency dividers; submicron collector-base junctions; submicron emitter-base junctions; substrate transfer processes; transferred-substrate HBTs; Bandwidth; Bipolar transistors; Capacitance; Frequency conversion; HEMTs; Heterojunction bipolar transistors; Indium gallium arsenide; Integrated circuit interconnections; MODFETs; Wiring;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1998. Technical Digest 1998., 20th Annual
Conference_Location :
Atlanta, GA, USA
Print_ISBN :
0-7803-5049-9
DOI :
10.1109/GAAS.1998.722641
