Electron-phonon scattering in planar MOSFETs with NEGF

Author

Pal, Himadri S. ; Nikonov, Dmitri E. ; Kim, Raseong ; Lundstrom, Mark S.

Author_Institution

Dept. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA

fYear

2010

fDate

13-14 June 2010

Firstpage

1

Lastpage

2

Abstract

An approach to include elastic and inelastic electron-phonon scattering into the nonequilibrium Green´s function (NEGF) framework that is computationally manageable and applicable to planar MOSFETs has been developed. By reformulating the NEGF equations in terms of integrated transverse momentum modes, the computational burden has been significantly reduced. This allows treatment of both quantum mechanics and dissipative electron-phonon scattering processes for device sizes from nanometers to microns. The formalism is rigorously benchmarked against semiclassical Monte Carlo transport.

Keywords

Green´s function methods; MOSFET; Monte Carlo methods; electron-phonon interactions; quantum theory; Monte Carlo transport; NEGF equation; NEGF framework; dissipative electron-phonon scattering process; inelastic electron-phonon scattering; integrated transverse momentum mode; nonequilibrium Green´s function; planar MOSFET; quantum mechanics; Benchmark testing; Computational modeling; Electric potential; MOSFETs; Phonons; Scattering; Silicon; CMOS; NEGF; phonon; scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Nanoelectronics Workshop (SNW), 2010

Conference_Location

Honolulu, HI

Print_ISBN

978-1-4244-7727-2

Electronic_ISBN

978-1-4244-7726-5

Type

conf

DOI

10.1109/SNW.2010.5562595

Filename

5562595