• DocumentCode
    1908590
  • Title

    Planar Integration Technologies for Optoelectronic Integrated Circuits

  • Author

    Allan, D.A. ; Herniman, J. ; Sullivan, P. J O ; Birdsall, P. ; Quayle, A

  • Author_Institution
    Devices Division, British Telecom Laboratories, Martlesham Heath, Ipswich, IP5 7RE, United Kingdom.
  • fYear
    1991
  • fDate
    16-19 Sept. 1991
  • Firstpage
    271
  • Lastpage
    274
  • Abstract
    The development of Optoelectronic Integrated Circuits (OEICs) using planar integration technologies for good yields of fine linewidth (1¿m) FETs and novel notch PIN diodes is discussed. In particular the horizontal integration of a GaAs MESFET circuit with a PIN diode is demonstrated and used to produce single and four channel receivers. These circuits have good sensitivities (-29.3dBm at 250Mbit/s) and represent state of the art levels of integration.
  • Keywords
    Absorption; Contact resistance; Current measurement; Electrical resistance measurement; FETs; Gallium arsenide; Indium gallium arsenide; Integrated circuit technology; Lattices; MESFET integrated circuits;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1991. ESSDERC '91. 21st European
  • Conference_Location
    Montreux, Switzerland
  • Print_ISBN
    0444890661
  • Type

    conf

  • Filename
    5435328
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1908590