Title :
Planar Integration Technologies for Optoelectronic Integrated Circuits
Author :
Allan, D.A. ; Herniman, J. ; Sullivan, P. J O ; Birdsall, P. ; Quayle, A
Author_Institution :
Devices Division, British Telecom Laboratories, Martlesham Heath, Ipswich, IP5 7RE, United Kingdom.
Abstract :
The development of Optoelectronic Integrated Circuits (OEICs) using planar integration technologies for good yields of fine linewidth (1¿m) FETs and novel notch PIN diodes is discussed. In particular the horizontal integration of a GaAs MESFET circuit with a PIN diode is demonstrated and used to produce single and four channel receivers. These circuits have good sensitivities (-29.3dBm at 250Mbit/s) and represent state of the art levels of integration.
Keywords :
Absorption; Contact resistance; Current measurement; Electrical resistance measurement; FETs; Gallium arsenide; Indium gallium arsenide; Integrated circuit technology; Lattices; MESFET integrated circuits;
Conference_Titel :
Solid State Device Research Conference, 1991. ESSDERC '91. 21st European
Conference_Location :
Montreux, Switzerland
