• DocumentCode
    1908601
  • Title

    Origin of “current-onset voltage” variability in scaled MOSFETs

  • Author

    Kumar, A. ; Mizutani, T. ; Shimizu, K. ; Tsunomura, T. ; Nishida, A. ; Takeuchi, K. ; Inaba, S. ; Kamohara, S. ; Terada, K. ; Hiramoto, T.

  • Author_Institution
    Inst. of Ind. Sci., Univ. of Tokyo, Tokyo, Japan
  • fYear
    2010
  • fDate
    13-14 June 2010
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Present work analyzes the cause of “current-onset voltage” variability, which has been newly found to largely affect drain current variability. It is found by 3D device simulation that the “current-onset voltage” variability is determined by how largely the channel potential fluctuates by random dopant disposition. Reducing RDF will suppress both threshold voltage and current-onset voltage variability as well.
  • Keywords
    MOSFET; semiconductor device models; 3D device simulation; RDF; current-onset voltage variability; drain current variability; random dopant disposition; scaled MOSFET; threshold voltage; Correlation; Electric potential; Resource description framework; Solid modeling; Subthreshold current; Three dimensional displays;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Silicon Nanoelectronics Workshop (SNW), 2010
  • Conference_Location
    Honolulu, HI
  • Print_ISBN
    978-1-4244-7727-2
  • Electronic_ISBN
    978-1-4244-7726-5
  • Type

    conf

  • DOI
    10.1109/SNW.2010.5562596
  • Filename
    5562596
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1908601