DocumentCode :
1908632
Title :
40-GHz frequency dividers with reduced power dissipation fabricated using high-speed small-emitter-area AlGaAs/InGaAs HBTs
Author :
Amamiya, Y. ; Niwa, T. ; Nagano, N. ; Mamada, M. ; Suzuki, Y. ; Shimawaki, H.
Author_Institution :
Opto-Electron. Res. Labs., NEC Corp., Ibaraki, Japan
fYear :
1998
fDate :
1-4 Nov. 1998
Firstpage :
121
Lastpage :
124
Abstract :
This paper reports low power dissipation 40-GHz frequency dividers fabricated using high-performance AlGaAs/InGaAs HBTs. The high-speed performance of small-emitter-area HBTs was markedly improved by analyzing the device delay time and reducing the emitter resistance R/sub E/. An f/sub T/ of above 110 GHz and an f/sub max/ of 250 GHz were achieved with a small emitter area of 2.8 /spl mu/m/sup 2/. A frequency divider fabricated using these high-speed small-emitter-area HBTs operated at 40 GHz with an output voltage of 0.6 V/sub P-P/ and a low power dissipation of 0.9 W. The power dissipation is reduced by 43% compared with that for a frequency divider using conventional size HBTs.
Keywords :
III-V semiconductors; aluminium compounds; bipolar digital integrated circuits; delays; frequency dividers; gallium arsenide; heterojunction bipolar transistors; high-speed integrated circuits; indium compounds; low-power electronics; 0.9 W; 110 GHz; 250 GHz; 40 GHz; AlGaAs-InGaAs; AlGaAs/InGaAs HBTs; device delay time analysis; emitter resistance reduction; frequency dividers; high-speed performance; power dissipation reduction; small-emitter-area HBTs; Capacitance; Delay effects; Doping; Epitaxial layers; Frequency conversion; Heterojunction bipolar transistors; Indium gallium arsenide; Laboratories; Performance analysis; Power dissipation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1998. Technical Digest 1998., 20th Annual
Conference_Location :
Atlanta, GA, USA
ISSN :
1064-7775
Print_ISBN :
0-7803-5049-9
Type :
conf
DOI :
10.1109/GAAS.1998.722644
Filename :
722644
Link To Document :
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